Corsair Vengeance Lpx Samsung B Die
Samsung B-Die in the test: Corsair Vengeance LPX DDR4-4600 on Ryzen 3000
tl; dr: RAM can exist overclocked or bought from the manufactory with very high clock rates and good timings. One case is Corsair's Vengeance LPX DDR4-4600 with Samsung's prestigious B-dies. Still, the exam shows that storage at the absolute peak performance is not just a marginal phenomenon for no reason.
Tabular array of contents
- one Specifications and details about the RAM kit
- Examination results
- Overclocking
- Synthetic benchmarks
- Game benchmarks
- Conclusion
Specifications and details about the RAM kit
In the Vengeance LPX series , Corsair traditionally offers the memory with the highestClock ex works. Upwards to DDR4-5000 CL18 will exist on offering here in March 2020, but is currently still at DDR4-4700 . ComputerBase has tested the DDR4-4600 variant.
The test pattern consists of ii bars of viii GB each Single rank blueprint. The specified timings are xix-26-26-46 for DDR4-4600 and a voltage of one.50 volts. The kit is currently listed from 600 euros in stores.
Samsung's B-Die memory fries in the A0 layout are installed on the eight-layer PCB. The module height of the Vengeance LPX series is but 31 mm and therefore offers sufficient infinite even nether very large coolers. This as well made it possible to use the front end fan in the examination system with a Noctua NH-D15 without restrictionsinstall.
An boosted RAM cooler is likewise included in the box. This is the 'Corsair Vengeance AirFlow' with a 60 mm fan and a maximum of three,500 rpm. The cooling surface tin be inverse in 3 different colors.
Product code CMK16GX4M2K4600C19 Product page Corsair.com Clock frequency DDR4-4600 size xvi GB - 2 × 8 GB timings 19-26-26-46 voltage 1.50 volts retentivity fleck Samsung B-Die construction unmarried rank guarantee 10 years in the EU Bandwidth PC4-36800 Thermal sensor No Module height 31 mm
Test results
The following system was used for performance measurement. The installed Windows 10 version 1909 was upward to appointment. All available security updates were active. The system was also equipped with the latest AMD chipset commuter (revision 2.01.xv.2138).
- AMD Ryzen v 3600
- Noctua NH-D15 chromax.black
- ASUS X570 Crosshair VIII Hero (Mod-BIOS 1201xR with AGESA 1.0.0.4 Patch b)
- MSI GeForce GTX 1070 Ti Gaming 8G (GeForce 442.50)
- Samsung SSD 960 EVO 500 GB (M.2, NVMe)
- Windows x Pro (1909)
Overclocking
RAM modules with Samsung B-Dice chips are nevertheless the spearhead in comparing to bars with other memory chips and are withal very popular with overclockers. The desired memory clock scales almost linearly with voltage and timing.
All the test profiles mentioned beneath were subjected to a stability test with Aida64 ("Stress Cache, Stress System Retention and FPU"), GSAT ("stressappen test") and Karhu RAM test ('Cache Enabled') for at to the lowest degree 60 minutes. Below is a small insight into the test course:
The XMP profile on DDR-4600 and one clock on the Infinity Fabricfrom 1800 MHz did not start on the tested organisation. It was only possible to start the operating system when the frequency was reduced to DDR4-4533 - the Infinity Cloth remained at 1800 MHz. When the in-service fabric clock was increased to 1900 MHz, stable operation was only possible from DDR4-4400. Here the retention controller of the test organization limits, and the dividers in this constellation no longer run 1: 1: ane (MEMCLK: FCLK: UCLK) and entail a penalty latency. div>
The tested RAM kit has great strengths in 'CAS Latency' (tCL) and 'Row Refresh Cycle Timing' (tRFC) and requires manageable voltage values even for very tight values. For a clock frequency of DDR4-3800, a 'CAS Latency' of 16 and a 'RowRefresh Cycle Timing "of 140 nanoseconds (corresponds to a tRFC of 266), a voltage of 1.39 volts is sufficient. When the tCL was tightened to 14, it was necessary to increase the voltage to 1.44 volts.
A clock frequency of DDR4-4400, a tCL of 16 and a tRFC of 160 nanoseconds (corresponds to a tRFC of 352) could too exist achieved with 1.51 volts - this is with a latency of vii.27 Nanoseconds very considerable. Information technology is not possible to fix such a low tRFC with other memory chips. With Micron E-Die ICs, you hit a wall in around 290 to 310 nanoseconds and with Hynix CJR ICs in around 260 nanoseconds - this cannot be avoided even with higher voltage.
Type Speed (MT/s) CAS-Latency (CL) Latency (ns) DDR4-2133 2,133 16 15.00 DDR4-3000 iii,000 16 10.67 DDR4-3200 3,200 16 x.00 DDR4-3200 3,200 15 9.38 DDR4-3200 3,200 14 8.75 DDR4-3600 3,600 16 8.89 DDR4-3600 3,600 xiv seven.78 DDR4-3800 3,800 sixteen 8.42 DDR4-3800 3800 fourteen vii.37 DDR4-4000 4,000 16 8.00 DDR4-4400 iv,400 16 7.27
The fact that the modules take been specifically optimized for DDR4-4600 with main timings of 19-26-26-26 shows with a weakness in 'RAS to CAS Delay' (tRCD - at AMD divided into 'read and write') ) and 'RAS Precharge' (tRP). Usually these values also scale relatively linearly with the voltage. With the tested kit, nevertheless, strong limits can be seen relatively early on. The first signs of this tin already be seen with DDR4-3800.
tCL scales without problems with DDR4-3800 with a voltage increase of up to ane.44 volts to a value of 14 - tRCDRD, on the other hand, tin no longer be pressed below a value of 17 fifty-fifty with an increment in voltage. Even with tRP it is not possible to get the values below sixteen stable.
Same weaknessesbecame even more than credible at college clock frequencies. With DDR4-4400, tRCD (RD and WR), tRP and other sub-timings had to be corrected upwards rapidly and relatively strongly in club to ensure stable operation. Attempts to farther tighten the primary timings (tRCD and tRP) often ended in blue screens or the showtime was refused at all. Finally, values with DDR4-4400 16-22-24-23-twoscore-56-352-1T with a voltage of one.51 volts were possible.
Synthetic benchmarks
Clock Timings Voltage DDR4-3800 16-16-17-16-32-42-266-1T one.39 volts DDR4-3800 xiv-14-17-xvi-28 -38-266-1T i.44 volt DDR4-440016-22-24-23-40-56-352-1T i.51 volts
« Previous
Aida64 - Enshroud and Retentivity Criterion | Higher is betterAida64 - Latency | Lower is betterSiSoft Sandra | Higher is amend
Next »
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Aida64 - Cache and Memory Benchmark | Higher is meliorate
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Read:
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DDR4-3800CL14 (OC)
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DDR4-3800CL16 (OC)
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DDR4-4400CL16 (OC)
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Write:
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DDR4-4400CL16 (OC)
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DDR4-3800CL14 (OC)
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DDR4-3800CL16 (OC)
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Copy:
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DDR4-4400CL16 (OC)
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DDR4-3800CL14 (OC)
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DDR4-3800CL16 (OC)
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Aida64 - Latency | Lower is better
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Latency:
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DDR4-3800CL14 (OC)
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DDR4-3800CL16 (OC)
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DDR4-4400CL16 (OC)
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SiSoft Sandra | Higher is improve
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Total storage chapters:
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DDR4-3800CL14 (OC)
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DDR4 -3800CL16 (OC)
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DDR4-4400CL16 (OC)
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Integer memory bandwidth:
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DDR4-3800CL14 (OC)
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DDR4-4400CL16 (OC)
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DDR4-3800CL16 (OC)
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Floating indicate memory bandwidth:
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DDR4-3800CL14 (OC)
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DDR4-3800CL16 (OC)
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DDR4-4400CL16 (OC)
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Since these are purely OC profiles, the differences between them are only minor. The increased copy throughput with asynchronous splitter with DDR4-4400CL16 is nice to see.In return, the latency is increased to over 70 nanoseconds, as the halved retentivity controller clock results in a decent penalty latency.
Game benchmarks
With Forza Horizon 4 (test ) the internal benchmark was used with a resolution of 2,560 × i,440, 144 Hz and the ultra graphics settings. CPU simulation and CPU render played a function in the analysis.
«Previous
Forza Horizon 4 - CPU simulation | College is betterForza Horizon 4 - CPU Render | Higher is amend
Side by side »
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Forza Horizon 4 - CPU Simulation | Higher is better
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AVG FPS:
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DDR4-3800CL14 (OC)
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DDR4-3800CL16 (OC)
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DDR4-4400CL16 (OC)
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MIN FPS:
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DDR4-3800CL14 (OC)
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DDR4-4400CL16 (OC)
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DDR4-3800CL16 (OC)
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MAX FPS:
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DDR4-3800CL14 (OC)
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DDR4-3800CL16 (OC)
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DDR4-4400CL16(OC)
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Forza Horizon 4 - CPU Render | Higher is better
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AVG FPS:
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DDR4-3800CL14 (OC)
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DDR4- 4400CL16 (OC)
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DDR4-3800CL16 (OC)
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MIN FPS:
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DDR4-3800CL14 (OC)
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DDR4-4400CL16 (OC)
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DDR4- 3800CL16 (OC)
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MAX FPS:
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DDR4-3800CL14 (OC)
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DDR4-4400CL16 (OC)
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DDR4-3800CL16 (OC)
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In real game benchmarks, the penalization latency with DDR4-4400CL16 does non play a major office. On the contrary, considering the minimum FPS in the CPU simulation can stand out by five percent compared to the profile in DDR4-3800CL16. This aspect is due to the increased copy throughput. In CPU-Render, the profile with DDR4-4400CL16 tin can stand out from DDR4-3800CL16 in all three regions. The contour with DDR4-3800CL14 does non come as a surprisethe top level and leaves the other OC profiles in CPU simulation and CPU render with at least FPS up to 12 percent behind.
Decision
Many modules that guarantee DDR4-4600 ex works are currently non available on the market. Corsair offers them in the Vengance LPX and Vengance RGB serial.
The tested LPX kit with ii 8 GB confined offers great strengths in 'CAS Latency' (tCL) and 'Row Refresh Cycle Timing' ( tRFC). The scaling of these values is really laudable. In that location are, notwithstanding, compromises with "RAS to CAS Delay" (tRCD - at AMD divided into "read and write") and "RAS Precharge" (tRP). With these timings, scaling via the voltage is only partially possible.
Even the loftier-priced RAM kit does not come without sacrificing timingOverclocking, such results can too exist achieved with significantly cheaper modules with Samsung B-Dice, because they are classified equally slower ex works - albeit with a slightly college voltage.
The missing thermal sensor leaves backside a bland aftertaste in this toll range. The included RAM cooler is a overnice gimmick, but the fan is ever noticeable.
As then oft in the past, customers of the DDR4-4600 from Corsair pay primarily for a guaranteed clock rate, which Ryzen 3000 users cannot utilise efficiently. Better timings thanThe retentiveness could not accomplish slower Samsung B-Die modules at clock rates up to well usable DDR4-3800.
Continuously adjusted RAM recommendations from the RAM OC customs are provided by the purchase advice from the community: RAM recommendations for AMD Ryzen and Intel Core .
ComputerBase has received the Vengeance LXP DDR4-4600 on loan from Corsair for testing. The test report was not influenced, and there was no obligation to publish information technology. There was no NDA.
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Source: https://technical-news.net/samsung-b-die-in-the-test-corsair-vengeance-lpx-ddr4-4600-on-ryzen-30001613953416
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